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Objective
Uterine papillary serous carcinoma (UPSC) is an aggressive subtype of endometrial cancer. Adjuvant chemotherapy (CT) has become standard care in treatment of women with advanced‐stage UPSC, but the role of consolidative radiotherapy (RT) is unclear. This study aims to evaluate survival outcomes of multimodal therapy.
Design
Retrospective cohort study using a National Cancer Database (NCDB)...
We report significant improvement of the TiSi / p-SiGe contact resistance by using a cryogenic (cold) boron implantation technique inside the contact trench of FinFET devices, providing both a source of dopants and a localized amorphization of the source/drain, self-aligned on the contact trench. A record low p-type contact resistivity of 5.9×10−9 ohm-cm2 is demonstrated and a 7.5% performance improvement...
Multiple gate field-effect transistors (MuGFET) are generally used in modern time semiconductor field due to better transistor current flow. However in the last advanced generation, MuGFET has transferred to Fin Field Effect Transistor (FinFET) structure with 3 dimensional (3-D) geometry to enable the minimize off-state leakage currents, high transistor current flow and quick switch…etc. advantages...
Different dose rates of implant can lead to different amorphous layer thicknesses for amorphizing implants and may influence device performance. In addition, it has to be noticed that the batch type spot-beam was proved as divergent beam with large angle divergence which is different from single wafer spot beam and also takes into consideration by both bare wafer and also real device leanings. In...
Optimization of halo profile for advanced MOSFET device is important to control device short channel effect as well as device leakage. Multiple halo implants, such as mixture of Indium and boron to tailor the halo formation, have been used widely for n-FET devices. Amid its AMU and solubility, Gallium has a potential for better halo activation than Indium and reduced lateral straggling than boron...
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