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A rich variety of nanostructures can be synthesized by varying pressure and temperature during vapor–liquid–solid (VLS) epitaxy on Si. The chemical vapor deposition (CVD) growth by VLS of epitaxial Ge nanowires and nanopillars seeded by metallic nanodots on (111) and (100) oriented Si is reported with an emphasis on analyses by ion backscattering and channeling in combination with scanning electron...