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Lateral bipolar n + pn + devices, with thick field oxide (TFO) separating the collector and emitter, are often used in snapback mode as protection devices for MOS ESD circuit protection.ESD testing for human body model (HBM), machine model (MM) and charged device model (CDM) waveforms was performed on a family of TFO cells which varied the gate length (bipolar base width) as the experimental...