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The paper examines the influence of ozone pre-treatment of the bottom TiN electrode in a HfO2-based resistive switching metal-insulator-metal structure. The HfO2 layers with thicknesses 5.7, 4 and 3 nm were prepared by ozone assisted atomic layer deposition. Selected samples were pre-treated by ozone-only cycles prior to HfO2 deposition. Stable and reproducible bipolar resistive switching was obtained...
The impact of post-deposition annealing of silicon based metal-insulator-semiconductor structures with SiO2/TiO2 dielectric layers is inspected by means of electrical characterisation. It is shown that annealing at 400 °C in the forming gas results into the photovoltaic response of MIS structure. Such behaviour is facilitated by the tunnelling of holes through SiO2. Annealing at higher temperature...
Suppression of surface donors (SDs) in AlGaN/GaN MOS-HEMTs represents a promising approach towards realization of normally-off switching devices with high threshold voltage. In this work, density of oxide/barrier interface traps (Dit) was determined in AlGaN/GaN MOS-HEMT structures with different SDs density (Nds), resulted from HCl pre-treatment variation. The results suggest deteriorated interface...
AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) represent an important technology for future high-efficient power and RF electronics. Due to oxide/semiconductor interface issues, fabrication of reliable MOS gate stack is still challenging, however. In this work we investigated the influence of gate oxide preparation technique to static and pulsed-mode operation of...
Metal-oxide-semiconductor (MOS) structure represents an important gate technology in GaN HEMTs. As oxide/semiconductor interface quality is remaining reliability concern, several techniques for determination of interface state density (Dit) has been proposed. In the literature, the hysteresis in C-V sweeps (or Vth shift, ΔVth) is often interpreted as Dit in particular energy range in the semiconductor...
The gate leakage reduction about four to seven orders of magnitude for HfO2 MOSHFETs (~10−10A/mm at −15V) prepared by Atomic Layer Deposition (ALD) technique at 350°C with and without oxygen-plasma treatment in comparison to HFET, was observed. A lower hysteresis evaluated from c-V curves of MOSHFET with oxygen-plasma treatment (OPT) after annealing (500°C for 15 min in N2) was found. The C-V curve...
We explored theoretically and experimentally frequency dependence of capacitance of insulator/GaN/AlGaN/GaN heterostructure MISH (metal insulator semiconductor heterostructure) capacitor and influence of interface traps density present at insulator/GaN/AlGaN interface on capacitance curves. We obtain correspondence between experimental results and theoretical predictions. Depending on the interface...
Resistive switching (RS) effects in Pt/HfO2/TiN MIM capacitors have been investigated in dependence on the TiN bottom electrode engineering, deposition process and dielectric thickness. It is found that RS ratio depends strongly on the amount of oxygen introduced on TiN surface during interface engineering. In some structures a full recovery of conductive filament is observed within more than 100...
InAlN/GaN is indeed an alternative to the common AlGaN/GaN heterostructure in electronics and sensing. It enables operation at extremely high temperature once problems with contact metallization and passivation have been solved. It is the only heterostructure known presently, which allows overgrowth of high quality diamond films to combine two of the most stable semiconductors. Thus, applications...
We present a new model of current transport in MIM structures due to quantum mechanical tunnelling. In addition to direct tunnelling through an insulating layer with high permittivity (high-k layer), an important role belongs also to tunnelling via defects present in the insulating layer.
We have prepared metal/insulator/metal (MIM) structures with RuO2 bottom electrode and TiO2 dielectric film for advanced dynamic random access memory (DRAM) technology. RuO2 films were grown by metal organic chemical vapour deposition while TiO2 films were prepared by atomic layer deposition. RuO2 bottom electrode crystallizes in rutile structure and induces growth of rutile TiO2. Equivalent oxide...
In this article, we investigate the effect of a rapid thermal annealing (RTA) on electrical properties InAIN/GaN MOSHEMT with Al2O3 insulating film. On samples, we measured input, output and pulse characteristics. Consequently, a threshold voltage and an extrinsic transconductance was determined. A more dramatic influence of RTA was observed after annealing at 700degC. In this case, a reduction of...
Electrical properties of metal-oxide-semiconductor structures composed of MOCVD grown Ru or RuO2 metal gates, rf sputtered Ta2O5 oxide layers, and nitrided Si was investigated. The dielectric constant of Ta2O5 as extracted from capacitance-voltage characteristics was found to be 24 and 28 for Ru and RuO2 gated structures, respectively. Interfacial SiO2-like layer with a thickness of ~2 nm was observed...
It is a well known fact that the moisture content of a power transformer insulation system is a key parameter for the estimation of its aging condition and operation reliability. Therefore detection of the moisture content is a very essential task within power transformer diagnostics. While conventional methods for estimation of the water content of the insulation system require a transformer shutdown...
It is a well known fact that the moisture content of a power transformer insulation system is a key parameter for the estimation of its aging condition and operation reliability. Therefore, detection of the moisture content is a very essential task within power transformer diagnostics. While conventional methods for estimation of the water content of the insulation system require a transformer shutdown...
The authors have studied advanced MOS structure containing Ru gate electrode, Hf0.75Si0.25Oy dielectric and Si substrate by means of capacitance-voltage characteristics (C-V), X-ray photoelectron spectroscopy (XPS) and reflection electron energy loss spectroscopy (REELS). Using experimental values we have constructed energy band diagram of the Ru/Hf0.75Si0.25/Si gate stack
We analyzed microstructure of as-deposited and rapid thermal annealed HfO2 and HfxSi1-xOy dielectric films with Ru gate electrode. As-deposited films exhibited dielectric constant 12 and 20 for HfxSi1-xOy and HfO2, respectively. TEM and grazing incidence XRD revealed that as-deposited HfO2 films have polycrystalline character, while HfxSi1-xOy films are amorphous. Rapid thermal annealing makes favourable...
In this paper we investigate growth of Al2O3 and performance of Al2O3/GaN MOS structures using O2, Ar and NH3 pre-treatment of GaN surface. Rapid thermal annealing (RTA) after the growth is also tested. Current-voltage (I-V) and thermal activation energy measurements were used for characterization of MOS and reference Ni/GaN Schottky contact structures. From the I-V characteristics, reduction of the...
The authors have studied the leakage characteristics of Ru/HfxSi 1-xOy/Si MOS capacitors projected for advanced CMOS gate technology. Prior to Ru gate electrode deposition, the gate dielectrics were annealed by RTA in the temperature range of 700 - 1000 degC in O2. The influence of RTA has been analyzed by X-ray diffraction, X-ray reflectivity and capacitance-voltage techniques. RTA at temperatures...
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