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We have prepared metal/insulator/metal (MIM) structures with RuO2 bottom electrode and TiO2 dielectric film for advanced dynamic random access memory (DRAM) technology. RuO2 films were grown by metal organic chemical vapour deposition while TiO2 films were prepared by atomic layer deposition. RuO2 bottom electrode crystallizes in rutile structure and induces growth of rutile TiO2. Equivalent oxide...
In this article, we investigate the effect of a rapid thermal annealing (RTA) on electrical properties InAIN/GaN MOSHEMT with Al2O3 insulating film. On samples, we measured input, output and pulse characteristics. Consequently, a threshold voltage and an extrinsic transconductance was determined. A more dramatic influence of RTA was observed after annealing at 700degC. In this case, a reduction of...
In this paper we investigate growth of Al2O3 and performance of Al2O3/GaN MOS structures using O2, Ar and NH3 pre-treatment of GaN surface. Rapid thermal annealing (RTA) after the growth is also tested. Current-voltage (I-V) and thermal activation energy measurements were used for characterization of MOS and reference Ni/GaN Schottky contact structures. From the I-V characteristics, reduction of the...
The authors have studied the leakage characteristics of Ru/HfxSi 1-xOy/Si MOS capacitors projected for advanced CMOS gate technology. Prior to Ru gate electrode deposition, the gate dielectrics were annealed by RTA in the temperature range of 700 - 1000 degC in O2. The influence of RTA has been analyzed by X-ray diffraction, X-ray reflectivity and capacitance-voltage techniques. RTA at temperatures...
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