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Amorphous SiO2 film was deposited by the direct current pulsed magnetron sputtering technology, which the reciprocating motion was carried out onto the substrate. Without reciprocating motion, the resistivity of SiO2 film was only about 3.3 × 106 Ω·μm. With 500 circles reciprocating motion, the resistivity increased to 1.9 × 109 Ω·μm. Transmission electron microscopy results revealed that the straight...
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