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Schottky diode structures with Ge quantum dots (QDs) have been grown by Molecular Beam Epitaxy (MBE). They have been employed to fabricate NiSi Schottky diodes with Ge dots buried below the metal-semiconductor junctions. These diodes have cut-off frequencies up to 1.1 THz (calculated from S-parameter measurements up to 110GHz). Preliminary results demonstrating the implementation of Ge QD Schottky...
In this paper we will present our latest research results of the integrated RECTENNA (the rectifying antenna) with a THz quantum dot Schottky Diode and an integrated silicon antenna for RF applications. Within this work a specific antenna design, an integrated single patch antenna, will be shown. A layer of Ge quantum dot (QD) was embedded in an integrated Si Schottky barrier diode. The high frequency...
In this paper we will present our latest research results of integrated quantum dot Schottky diodes and integrated silicon antenna for RF applications. Both, the quantum dot Schottky diodes and the antenna are integrated on Si substrates forming a simple mm-wave detection system, the rectifying antenna (RECTENNA). Within this work a specific antenna design, 1-dimensional array (single line antenna),...
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