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This paper focuses on the EM induced voiding in a line ended by a TSV, and proposes an analytical model based on the link between the monitored electrical resistance increase and the matter depletion flow.
This paper focuses on the link between initial electrical resistance of Through Silicon Via (TSV), and possible failure occurring during Thermal Cycling Test (TCT) and electromigration (EM) tests. Physical analyses reveal the presence of a carbon impurity layer at bottom of the higher resistance TSVs. This impurity induces failure during TCT, but has no impact on EM time to failure distribution. We...
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