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In this paper, we report on 1.2kV SiC MOSFETs rated to Tj, max=200°C, exhibiting improved performance characteristics across operating temperature. Our devices show stable, rugged and reliable operation when subjected to industry standard qualification tests. Low on-resistance of 35mOhm/79mOhm at Tj=25°C and 47mOhm/103mOhms at Tj=150°C are shown for 0.1cm2 and 0.2cm2 die. 1000 hour High-Temperature...
Negative bias temperature instability (NBTI) recovery for pure-SiO2 and plasma-nitrided oxide (PNO)-based PMOSFET has been investigated at room and below temperature. It is found that the generated hole traps in SiON dielectric under NBTI stress has a broadened energy distribution than that in SiO2 dielectric. This broadened maybe due to nitrogen related traps (K center) In SiON. The traps' location...
The authors have fabricated silicon nanowire (SiNW) based Al2O3/HfO2/SiO2 nonvolatile-memory (NVM) cells with varying HfO2 trapping layer thickness have been fabricated by using self-aligning approach. The cells exhibit excellent characteristics such as fast programming/erasing (P/E) speeds, good endurance and excellent retention. The P/E speed is not sensitive to the HfO2 layer thickness. The magnitude...
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