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The impact of fin line-edge roughness on threshold voltage and drive current of LSTP-32 nm Fin-FETs is estimated through TCAD simulations. A Monte Carlo approach highlights an increase in the average VT and a decrease in the average ION w.r.t. sensitivity analysis based predictions. Correlations of fin shape fluctuations to electrical performance are investigated. An equivalent fin width is calculated,...
Source/drain formation in ultra-thin body devices by conventional ion implantation is analyzed using atomistic simulation. Dopant retention is dramatically reduced by backscattering for low-energy and low-tilt angles, and by transmission for high angles. For the first time, molecular dynamics and kinetic Monte Carlo simulations, encompassing the entire Si body, are applied in order to predict damage...
Atomistic modeling and optimized TCAD simulation strategy for Laser-only annealing device are shown. Multiple laser annealing scans are modeled by using atomistic KMC. KMC clarified that dopant diffusion is changed as a function of laser scan number. SSRM with 1 nm special resolution is used for the 2-dimensional carrier distribution measurement and dopant active level determination. It is shown that...
In this work, we investigate the floating gate (FG) cell leakage through high-k interpoly dielectrics (IPDs) using a statistical approach. The impact of defects on stack scalability is addressed from a NAND technology perspective. Trap distributions are extracted from high-temperature retention tests carried out on Al2O3-based IPDs. Extracted material parameters are used together with a newly developed...
n-type dopant diffusion during sub-millisecond (ms) non-melt laser annealing (NLA) is investigated through the experiments and atomistic KMC modeling. Laser-only annealing can improve the n-type dopant activation and achieve shallow junctions. KMC model with vacancy complexes indicates that laser-only annealing for nFET can achieve highly activated junctions and reduce dopant fluctuations in the channel...
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