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In the paper experimental, as well as theoretical studies of sputtering yield of the Ti and Fe cathode under irradiation by nitrogen and neon glow discharge plasma are presented. The experimentally measured efficiency of the metallic cathode sputtering by neon plasma is four times higher than that of the sputtering by nitrogen plasma, despite the similarity of energy-flux characteristic of both plasmas...
In the paper we present the results of a computer simulation and measurements of heavy ions implantation into light target material (low atomic number). The calculations have been done using the SATVAL code, and the results are compared with the experimental data from the SIMS measurement. We used the W-Be, Cs-Be, and Cs-C ion-target combinations for computer modelling of the low energy ion implantation...
Badano parametry implantacji niskoenergetycznych jonów indu do tarcz z lekkich pierwiastków Be i C wykorzystując do pomiarów spektrometr SIMS. Porównano dane eksperymentalne z obliczeniami przy użyciu programu komputerowego SATVAL.
GaAs samples implanted with Ar + , Al + and Xe + ions were studied by using the RBS and ellipsometric methods. The values of thickness of the implanted layers were estimated by both methods and they were in good agreement. These results were also compared with the values of parameters of the depth distribution of implanted ions calculated by SATVAL code. Multilayer models were...
The Monte Carlo computer code for the determination of the spatial distribution of atoms sputtered from the cathode material is presented. The code calculates the trajectories of sputtered particles in the plasma region assuming their neutral charge status during the whole path, which means that only scattering by plasma gas particles is taken into account in this model. The Moliere approximation...
The measurements of intensity of secondary caesium, as well as chlorine ion peaks, as a function of time of irradiation were made for the Si samples using a secondary ion mass spectrometer (SIMS). The results of such measurements enable us to study the effects of variation of secondary ion emission yield during the increasing dose of irradiation of the samples. The information about saturation effects...
If working gas and cathode metal used for a glow discharge show a chemical affinity then the ion/cathode interaction is complex. Regard paid to particular features of the molecular ions (N2+)/metallic (Ti) cathode surface interaction and to the secondary deposition of sputtered atoms, that characteristics only of plasma sputtering, allowed to agree sputtering yields - both calculated with a computer...
Ion sputtering of Ti target irradiated by nitrogen and argon ions with the energy of 3 keV was analysed by computer simulation with SATVAL code. Results of sputtering yield calculation as a function of dose of irradiation were compared with experimental data published by Kyung-youl Min et al. [1].
The paper presents the results of direct, low energy implantation investigations, using the SIMS apparatus. The retained dose for the Cu and Ag samples as a function of irradiation dose of the Cs+and K+ions, as a primary beam was measured. From such relation the range profiles of implanted ions were calculated. The comparisons with the results of the computer simulation and analytical theory are also...
The paper presents a modification of the thermal emission Cs+ion source used for SIMS spectroscopy purposes. The source was modified in such a way that both the positive ion beam (in thermal emission mode), and the negative one (in sputter mode) may be emitted by the source. The mass spectra of both beams are shown and analysed. Also comparison of the secondary ion mass spectra obtained for negative...
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