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The properties of thin CN x layers prepared by rapid thermal annealing (RTA) are compared with CN x layers obtained from N 2 plasma treatment. Carbon films of 6000 A thickness were deposited by magnetron sputtering system on p-type silicon substrates. The samples were treated in an RTA system in N 2 atmosphere at a temperature above 800 C. Some of the samples were...
The possibility of obtaining palladium silicide layers by rapid thermal annealing (RTA) has been studied. Palladium layers of 300 and 1000 9 thicknesses were deposited by r.f. sputtering on Si substrates. The samples were subjected to RTA at 800, 1000, 1200 and 1400 o C for 15 s, 30 s, 1 min and 3 min in vacuum 5x10 -5 Torr. The deposited structure was studied by RHEED. The...
We have analyzed the Raman scattering spectra of as-prepared and high temperature vacuum annealed porous silicon (PS) layers. The Raman spectra were used to analyze changes in the porous silicon crystallinity following the annealing. The spectra indicate that the effect of annealing depends non-linearly on the temperature. The maximal amount of PS phase and a-Si (amorphous silicon) phase is observed...
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