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In this work thermoelectrical properties of TiO2:(Co, Pd) and TiO2:Nb thin films have been described. Thin films were performed by high energy magnetron sputtering method. Sputtering process was carried out from mosaic targets under low pressure of oxygen reactive gas. Electrical and thermoelectrical properties of as deposited and annealed at 800 K thin films were analyzed based on resistivity and...
In this work structural, electrical and antistatic properties of TiO2 thin films doped with different amount of V have been presented. It was shown that the doped thin films are semiconductors in room temperature. The amount of V dopant has a great influence on resistivity of prepared thin films similarly as annealing at 400degC. The time of static charge dissipation from the thin films surface dropped...
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