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This paper reports on results of modeling of current-voltage characteristics of the Ag/ZnO/TiAu planar Schottky diodes containing interfacial layer of hafnium dioxide (HfO2) with thickness ranging from 1.25 to 7.5 nm. It was found that forward characteristics can be described with thermionic emission theory. In this way, values of some relevant diodes’ parameters were determined, including the ideality...
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