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Electrically detected magnetic resonance (EDMR) measurements of 4H-SiC/SiO2 metal-oxide-semiconductor field-effect transistors (MOSFETs) show large changes in the EDMR induced by gamma irradiation, indicating substantial changes in interface structure but, surprisingly, no generation of interface dangling bond defects. Our results indicate substantial fundamental atomic scale differences between radiation...
We investigate leakage currents in a-SiOC:H thin films with electrically detected magnetic resonance (EDMR) and new zero field magnetoresistance measurements. We substantially change leakage currents by subjecting the dielectrics to 60Co gamma irradiation. Our results strongly suggest the potential of a very simple measurement, near zero field magnetoresistance, as a reliability physics tool in the...
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