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By using appropriate the material of gate electrode in metal-oxide-semiconductor structure, a Si-based photodetector for ultraviolet light (319 nm) detection has been demonstrated. Due to the spectral dependence of absorption coefficients of the Ag as gate electrode, the narrow-band detection of ultra violet can be achieved. The Ag photodetector exhibits maximum responsivity value of 5.59 mA/W at...
The stimulated emission from (110) Ge was observed in the metal-insulator-semiconductor (MIS) laser diode with a simple Fabry-Perot cavity by current injection at room temperature. The lasing characteristics consist of (1) sudden increase of efficiency in the light-out current-in curve, (2) the transverse electrical mode polarization, (3) the strong directivity of the far field pattern, (4) the narrow...
Pt/oxide/n-6H-SiC tunneling diode has been fabricated using liquid phase deposited oxide as the tunneling oxide. At the negative bias, the electrons can be injected from the Pt gate to n-SiC, and recombine radiatively with the trapped holes in the defects near the oxide/SiC interface. The electroluminescence at room temperature from the SiC MOS tunneling diodes is observed for the first time. The...
In order to overcome the speed limitation of electrical interconnects, we integrate ultra large scale integrated (ULSI) circuits with the electro-optics. Besides the modulator, both the light emitting diode (LED) and the detector are essential to achieve this goal. In order to get greater functionality, we integrate Si chip with the Si based electro-optics. For the time being, the light emitter is...
In summary, the ~1.5 mum Ge QD MOS LED which is fully compatible with ULSI process is reported for the first time. The origin of the emission is due to the radiative recombination between the electrons and holes confined in the Ge QD. The electrons also recombined with holes at the Si/oxide interface and the band edge light emission from Si is also observed
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