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We present a theoretical analysis on the electrical characteristics of n-type Si-based resonant tunneling diodes (RTDs) with double-barrier heterostructures (DBHs) on either partially or fully relaxed SiGe buffer layers. The analysis on these DBHs indicates that the large peak-to-valley ratios (PVRs) obtained at low temperatures decrease rather rapidly with the increase of temperature and become negligibly...
By using appropriate the material of gate electrode in metal-oxide-semiconductor structure, a Si-based photodetector for ultraviolet light (319 nm) detection has been demonstrated. Due to the spectral dependence of absorption coefficients of the Ag as gate electrode, the narrow-band detection of ultra violet can be achieved. The Ag photodetector exhibits maximum responsivity value of 5.59 mA/W at...
Pt/oxide/n-6H-SiC tunneling diode has been fabricated using liquid phase deposited oxide as the tunneling oxide. At the negative bias, the electrons can be injected from the Pt gate to n-SiC, and recombine radiatively with the trapped holes in the defects near the oxide/SiC interface. The electroluminescence at room temperature from the SiC MOS tunneling diodes is observed for the first time. The...
In order to overcome the speed limitation of electrical interconnects, we integrate ultra large scale integrated (ULSI) circuits with the electro-optics. Besides the modulator, both the light emitting diode (LED) and the detector are essential to achieve this goal. In order to get greater functionality, we integrate Si chip with the Si based electro-optics. For the time being, the light emitter is...
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