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In this paper the modelling approaches for determination of the drain current in nanoscale MOSFETs pursued by various partners in the frame of the European Projects Pullnano and Nanosil are mutually compared in terms of drain current and internal quantities (average velocity and inversion charge). The comparison has been carried out by simulating template devices representative of 22 nm Double-Gate...
In this paper we mutually compare advanced modeling approaches for the determination of the drain current in nanoscale MOSFETs. Transport models range from Drift-Diffusion to direct solution of the Boltzmann Transport equation with the Monte-Carlo methods. Template devices representative of 22 nm Double-Gate and 32 nm FDSOI transistors were used as a common benchmark to highlight the differences between...
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