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GaN emitters have historically been of hexagonal phase due to natural crystallization. Here we introduce a cubic phase GaN emitter technology that is polarization-free via cointegration on cheap and scalable CMOS-compatible Si(100) substrate.
A novel, highly efficient out-phasing amplifier with adaptive power combiner is presented. Saturated class-F operation is used for the amplifier cells. Varactor tuning is applied to make the output power combining network adaptive. Use of optimum input drive conditions and output varactor tuning, to eliminate imaginary loading introduced by the out-phasing principle, yields an amplifier efficiency...
Incremental-step-pulse programming (ISPP) is a key enabler for achieving tight VT distribution for MLC NAND Flash. The ISPP characteristics for BE-SONOS NAND Flash are studied extensively in this work. Experimentally we find that the ISPP slope is very close to 1 for BE-SONOS capacitors for a wide range of EOT and O1 variations. A theoretical model is developed to prove that ISPP slope~1 is a universal...
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