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An on-chip automatic erase technique using an internal voltage generator has been developed and has proved to operate well in 1-Mb-flash EEPROM. This technology permits accurate control of erasure and guarantees the performance after erasure of the true single-transistor-per-cell type of flash EEPROM. Device implementation is described
An internal erase and erase-verify control system implemented in all electrically erasable, reprogrammable, 80-ns, 1-Mb flash memory suitable for in-system reprogram applications is discussed. This system features a command signal latch, a sequence controller, and a verify voltage generator. Timing in the electrical erase mode is shown. The erase mode is initiated by a 50-ns pulse. An erase and erase-verify...
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