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In this work, heavy ion and energetic proton single event upset (SEU) cross sections are measured for a 4 Mbit CMOS, static random access memory (SRAM). Heavy ion upset cross sections were used to define a dosimetry model suitable for use in a Monte-Carlo, physics-based transport code, which is shown to be predictive for experimentally measured proton single event upset (SEU) cross sections. The simulator...
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