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We present a theoretical model and experimental validation for electrode design of semiconductor traveling wave modulators. An InP Mach-Zehnder interferometer gives a Vpi of 1.7 V, optical insertion loss of 11 dB, and bandwidth of 8 GHz.
A DFB laser with a modulation bandwidth of 22 GHz together with a sidemode suppression in excess of 50 dB is reported. The wide bandwidth is achieved by using a doped SCH region which is sufficiently thick to accommodate a DFB grating, and a ridge-waveguide structure with patterned p-side metallisation to give very low parasitic capacitance. A differential gain of 25*10/sup -16/ cm/sup 2/ is reported...
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