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In the SPM-based microplasma etching system proposed in our previous work, the stable discharge performance of microplasma device in reactive gases is the foundation of the following maskless scanning etching. In order to realize microplasma etching of SiO2 or Si3N4, CHF3 or CHF3/Ar mixtures is chosen as the operating gas. Although discharge characteristics of microcavity plasma devices in rare gases...
We report electrical properties and Optical Emission Spectrum of DC-Driven Microplasma Reactor for Scanning Plasma Etching in pure SF6 environment with different device size between 5–12 kPa gas pressures. The Microplasma Reactor is consists of metal-insulator-metal sandwich structure, and with an inverted pyramidal shape hollow cathode. A diagnostic system is design to measure the V–I curve and OES...
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