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In summary, epitaxial Ge1-xSnx films with hole mobilities as high as 600 cm2V-1s-1 were deposited on Si(100) substrates by UHV-CVD and used to fabricate photoconductor devices employing standard semiconductor processing steps. Performance measurements of the produced device provided feedback for improvement of the Ge1-xSnx material quality during the growth. Photoconductor devices showed maximum 0...
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