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The paper presents the results of studies of monoatomic layers of graphene obtained using the CVD method on a copper foil, followed by transfer to a sapphire substrate. The basic electrophysical parameters of graphene samples were measured. Their irradiation with neutrons in the nuclear research IBR-2 reactor was carried out up to the fluences of 4.5·1019 n·m−2. A comparison of the Raman spectra before...
We present an investigation of shot noise in graphene-based Hall sensors, with the purpose of evaluating their detection limit and of developing strategies to improve their characteristics. We perform measurements on two devices, one with a defective contact that could however be used as a gate to control the carrier density in the device and the other with all contacts working. We discuss the results...
We demonstrate a graphene/nanotube hybrid phototransistor, in which photogating provided by the nanotube layer leads to a dramatically enhanced photoresponsivity (>100A/W) in the visible range, corresponding to ∼104 enhancement with respect to a graphene-only device.
A photodetector based on SWNT-graphene hybrid films and facile fabrication steps is demonstrated, which exhibits a remarkably high photoresponsivity of ∼ 100 A/W, across visible (400 nm) to the telecommunication wavelengths (1550 nm).
In this paper we show how new materials such as InP epitaxially grown on silicon, graphene and ferroelectric materials with strong electro-optic coefficient can be integrated with silicon waveguides and enhance the functionality of the silicon photonics platform.
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