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HfO2-based resistive RAMs have been irradiated with high-linear energy transfer heavy ions and subjected to an extensive characterization, showing that the cells are immune from upsets. No relevant changes were observed in the irradiated cells on resistance distribution and programming voltages. The irradiation experiment has been performed without any applied bias (retention mode). Reasons for the...
HfO2-based resistive RAMs have been irradiated with high-LET heavy ions and subjected to an extensive characterization, showing that the cells are immune from upsets. Reasons for the observed hardness are discussed.
The quest for the universal memory has been pursued since several years, but as far results from scientific literature do not declare one single technology able to fit all the requirements of the memory hierarchy. Flash and DRAM cover more than 95% of the global sales in the semiconductor memory market [1], but none of the two is able to substitute the other. This appears to be true also for disruptive...
This paper presents the technological process and electrical behaviour of SONOS FinFlash devices fabricated on silicon-on-insulator (SOI) substrates and including HfO2 in the inter poly dielectric (IPD). Using trimming techniques, ultra-scaled devices were processed with aggressive dimensions down to 10 nm channel width and 30 nm gate length. Good performances are obtained in Fowler-Nordheim (FN)...
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