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In this work, we use atomistic simulation, consolidated by a detailed Al2O3 physico-chemical material analysis, to investigate the origin of traps in Al2O3 (in particular, Al- or O-vacancies and H-interstitials). It is shown that the leakage currents through Al2O3 layers, with different post-deposition anneals, are strictly correlated to the H content. Then, for the first time at our knowledge, the...
This paper describes a CMOS technology designed for static RAMs and microprocessors operating at 3.3 V. The technology features dual-work-function NFETs and PFETs that achieve 0.22 and 0.18 ??m minimum channel lengths, respectively. It also includes shallow-trench isolation, nitrided oxide for reliability, self-aligned titanium silicide diffusions and polysilicon, a damascene tungsten local interconnect,...
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