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(In,Ga)2Se3 (IGS) thin films were deposited on Molybdenum (Mo) coated soda lime glass (Mo/SLG) substrates, using physical vapor deposition (PVD) technique, resembling only the first stage of the typical 3-stage growth process of CIGS thin film. The Mo thin films were sputtered on SLG substrates using DC planar magnetron sputtering at working gas (Ar) pressure that varies from 0.6 mT to 16 mT. The...
Two separate series of Mo thin films were deposited on Si/SiO2, and soda lime glass (SLG) substrates using direct-current planar magnetron sputtering, with a sputtering power density of 1.2 W/cm2. The working gas (Ar) pressure was varied from 0.6 mT to 16 mT to gain a better understanding of the effect of sputtering pressure on the morphology and porosity of the Mo thin films and the subsequent effect...
Real time spectroscopic ellipsometry (RTSE) has been applied to develop deposition phase diagrams that describe the thickness evolution of the phase of hydrogenated silicon (Si:H) thin films. Such diagrams can be applied to establish optimization principles for the intrinsic (i-) layers incorporated into high performance solar cells based on amorphous Si:H (a-Si:H). The phase diagrams for the growth...
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