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It has been recently identified that the near-interfacial oxide trap called `border trap' can strongly affect the radiation response and long term reliability of irradiated MOS devices. But the existing mobility models used to compute radiation induced mobility degradation does not include border traps. Also the quantum mechanical structural confinement plays an important role in the reliability of...
In this paper, we investigate optimum radiation hardened by design (RHBD) for use against single-event transients (SET) using low-pass filters (LPF) including RHBD techniques against single-event upsets (SEU) for sequential logic in 45 -nm technology in a terrestrial environment. Three types of LPF were investigated regarding their SET pulse immunities, area penalties, and performance penalties. We...
This paper presents an analytical modeling of ballistic and quasi-ballistic transport, implemented in Verilog-A environment and used for circuit simulation. Our model is based on the Lundstrompsilas approach and uses an expression of the backscattering coefficient given by the flux method. The model takes also into account short channel effects and tales into account the effects of different scattering...
Simple ring-oscillator circuit has been used to estimate the degradation in circuit performance due to negative bias temperature instability (NBTI) effect but it fails to isolate the degradation from the NBTI for PMOS and the positive bias temperature instability (PBTI) for NMOS in high-K dielectric/metal gate CMOS technology. In this paper, we propose new circuit structures which monitor the NBTI...
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