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Semiconductor nanowires grown via the vapour-liquid-solid (VLS) mechanism are promising for miniaturisation of optoelectronic devices. Efficient optoelectronic devices require these nanowires to have high quantum efficiency. While optimizing the growth process to eliminate bulk defects and achieve perfect surface passivation is one approach to increase the quantum efficiency of nanowires1, coupling...
A systematic growth temperature study has been performed to achieve high quality InP nanowires (NWs) by selective-area metal-organic vapour-phase epitaxy (SA-MOVPE). The optical quality of these nanowires was evaluated from time-resolved photoluminescence (TRPL) at 300 K.
We study the possibility of increasing the quantum efficiency of III–V semiconductor nanowire emitters using plasmonics. Results on the effect of plasmonic nanoparticle size, emitter-plasmonic nanoparticle distance and the initial quantum efficiency of the emitter on the quantum efficiency enhancement factor are presented.
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