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In this brief, we propose a new dual-material-gate-trench power MOSFET that exhibits a significant improvement in its transconductance and breakdown voltage without any degradation in on-resistance. In the proposed structure, we have split the gate of a conventional trench MOSFET structure into two parts for work-function engineering. The two gates share the control of the inversion charge in the...
Hybrid Si/InGaAsP Fabry-Perot evanescent lasers are fabricated via wafer bonding. Compared with previous similar devices, the current threshold density, turn-on voltage, output power and slope efficiency are all improved. Images show modal confinement to Silicon.
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