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Experimental electrical property data on silicon grain boundaries (GBs) are reported on a unique sample set consisting of direct silicon bonded (110)/(100) hybrid orientation wafers using C-V, I-V, and MOS capacitance transient techniques. For the relatively clean interfacial bonded GB, the density of GB states NT is on the order of 1012 eV-1cm-2, and the charge neutral level is at ~0.53 eV from the...
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