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This paper focuses on the electrical-thermal multiple-field analysis on degradation and failure of an 110 kV-class surge arrester subjected to successive lightning current impulses by experiment and simulation. Performance deterioration of the arrester under successive 8/20 s lightning strikes was measured. Deterioration steps of characteristics and residual voltage of arrester were detected,...
AlGaN/GaN HFET devices demonstrate remarkable performance. For commercial acceptance of this technology, long-term device stability must meet stringent industry standards. We review the current status of GaN reliability and contrast it with the requirement for commercial viability. Results analyzing degradation pertaining to buffer leakage and gate diode forward failure is presented
The degradation of 36mm AlGaN/GaN HFETs-on-Si under DC stress conditions has been studied on a large number of nominally identical devices that were chosen randomly across a production process. A common and primary degradation phenomenon was observed in the devices. A combination of electrical and physical analysis was used to identify a possible failure mechanism related to the Ni/Au Schottky gate...
ESD-induced latent damage in CMOS integrated circuits has been thoroughly investigated after cumulative low-level ESD stress. A study of the latent damage for transistors at the package level has been performed with various kinds of ESD stress modes. The impact of latent damage on circuit performance degradation was also evaluated using a 64 Mb DRAM chip as a DUT.
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