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We report high-speed waveguide photodetectors with RPCVD-grown Ge on SOI. The device exhibits a 3 dB bandwidth of ~50 GHz, a responsivity of 0.8 A/W, and a low dark current of 35 nA at lambda ~ 1.55 mum.
We present high-speed Ge p-i-n photodetectors for vertical incidence with high responsivity, grown by reduced pressure chemical vapor deposition. From the high-resolution X-ray diffraction analysis, the Ge epilayer shows good crystalline homogeneity and the residual tensile strain of 0.16%. The fabricated device exhibits the 3-dB bandwidth of 36 GHz, the responsivity of 0.47 A/W, and low dark current...
Vertical Ge photodetectors were fabricated on silicon using RPCVD showing bandwidth of 35 GHz at -3 V, dark current of 30 nA, and responsivity of 0.47 A/W for 20 mum-diameter detectors.
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