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Ge n- and p-FinFETs with different interfacial layer ferroelectric HfZrOx (IL-FE-HZO) gate stacks have been demonstrated systematically by various annealing conditions for the first time. Microwave annealing (MWA) not only shows enhanced FE characteristics but also suppresses the gate leakage and Ge interdiffusion compared with conventional rapid thermal annealing (RTA). While HZO on Al2O3 IL results...
Ge peaking n- and p-FinFETs have been demonstrated by adopting neutral beam etching (NBE) and anisotropic neutral beam oxidation (NBO) processes. The irradiation-free NB processes not only suppress surface roughness but also guarantee low defect generation on the etched Ge surface. The fabricated Ge peaking FinFETs possess several unique features: (1) A peaking fin configuration with a 6-nm top-gate...
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