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Power electronic applications come along with very high requirements in terms of reliability. Thermal loadings stress whole electronic packages while powering the semiconductor and by environmental temperature changes. Direct copper bonding (DCB) substrates are widely used in electronic applications due to its high thermal conductivity performance. They consists of copper layers sintered onto an Al...
In this study, an effective method to enrich the rotifer Brachionus plicatilis with copper was developed as a feed for the Chinese mitten crab Eriocheir sinensis zoea larvae. Changes in the concentrations of other minerals in rotifers were also examined when copper was added for rotifer enrichment. The ability of Chlorella to absorb waterborne copper is much higher than that of rotifers, and hence,...
Hydrostatic stress of Cu damascene interconnects was calculated by using finite element method in the present work. The analytical work was performed to examine the distribution of hydrostatic stress and the effect of different line width in the Cu interconnects. Then a model of atomic diffusion was presented and used to calculate the size of stress-induced voiding according to result of hydrostatic...
This study is focused on the characteristic of copper foil for lithium secondary battery application. As a current collector of negative electrode, not only the superior electric character, copper foil must possess high adhesion ability, high elongation, heat and chemical resistance, etc. First, the morphology of double side must be similar, thus the graphite coating amount and adhesive strength between...
Hydrostatic stress of Cu damascene interconnects were calculated by using commercial finite element software in the present work. The analytical work was performed to examine the distribution of hydrostatic stress and the effect of different low-k dielectrics and barrier materials in the Cu interconnects. The results indicate that the hydrostatic stress is strongly dependent upon different low-k dielectrics...
Due to their influence on the mechanical properties, residual stresses in thin films have become an important topic in materials science. The elastic constants are required to determine the residual stresses using X-ray diffraction method. The elastic constants of Cu thin films with ideal fibre textures were calculated using the Voigt, Reuss and Hill model in the present work. The results show that...
In this work, we demonstrate the capability of Ecmp to meet the 45 nm and 32 nm technology node requirements in terms of topography behavior, the related electrical spread, lithography DOF budget and ULK compatibility.
MOCVD TiSiN was evaluated as a barrier for Cu interconnects application. The TiSiN film was formed by SiH/sub 4/ soaking of MOCVD TiN. The TiSiN film showed improved wetting and adhesion to Cu as well as less stress hysteresis in its integration with Cu. The low stress hysteresis yields higher resistance to Cu void generation during hot storage testing. Electrical tests on DLM Cu test structures demonstrated...
Electrochemical deposition (ECD) is currently the only practical process for manufacturing Cu interconnections on silicon integrated circuits. However, this application is relatively new and some issues related to ECD defects remain to be resolved. One of the most important types of ECD defects consists of voids clustered together to form curved lines, referred to as "swirl defects". The...
Auger electron spectroscopy and temperature programmed desorption studies under ultra-high vacuum conditions demonstrate that even sub-monolayer coverages of oxygen or carbide on polycrystalline Ta significantly degrade the strength of Cu/Ta chemical interactions, and affect the kinetics of Cu diffusion into bulk Ta. On clean Ta, monolayer coverages of Cu will de-wet only above 600 K. A partial monolayer...
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