The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Charge trapping flash memory devices using (HfO 2 ) 0.9 (Al 2 O 3 ) 0.1 as the charge trapping layer were fabricated, and the effect of post-annealing atmospheres (NH 3 and N 2 ) on its charge storage characteristics was investigated. It was found that NH 3 annealed memory device showed a larger memory window of 7.3 V and improved data...
Electrical properties of Al 2 O 3 thin films grown by atomic layer deposition on Si and GaAs substrates were characterized and compared by current–voltage and capacitance–voltage measurements. The interfacial oxide layers thicknesses, the flat band voltages and the doping levels in the semiconductor substrates were determined. The differences in dielectric constants and breakdown fields...
Tunnel field-effect transistors (TFETs) are under intense investigation for low-power applications because of their potential for extremely low subthreshold swing (SS) and low off-state leakage [1]. III–V semiconductors with small effective mass and near broken band alignment are considered to be ideal for TFETs in that they promise high on-current and ION/IOFF ratios [2–3]. In this paper, we report...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.