The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
We report that MBE-grown three-dimensional (3D) topological Dirac semimetal Cd3As2 thin-film exhibits remarkable saturable absorption effects at 1, 1.5 and 2 μm. A mode-locked Tm fiber laser is demonstrated using such a SESAM-like material.
2–5 μm saturable absorbers are highly desirable for constructing convenient mid-infrared ultrafast sources. We reveal that three-dimensional Dirac semimetal Cd3As2 constitutes an ideal mid-infrared saturable absorber, with broadband operation and flexible parameter control.
We investigated ultrafast carrier dynamics in Cd3As2 at 2.6 μm. Single-exponential decay and saturable absorption features are observed. The ultrafast optical nonlinearity suggests that Cd3As2 is useful for mode-locking lasers in the mid-IR range.
In this study, the structural characteristics of GeMn diluted magnetic semiconductor (DMS) thin films grown by molecular beam epitaxy (MBE) with different growth conditions are summarised.
We demonstrate selectively-grown GaAs nano/micro structures on silicon substrates by molecular beam epitaxy. Hexagonal or rectangular shaped GaAs crystals, depending on the orientation of the silicon substrate, were formed inside the silicon-dioxide-masked nanoholes at 630°C. Clear facets, which are the low-energy {011} planes, indicate single-crystalline nature of the growth. GaAs/InAs/GaAs structure...
The authors investigated the origin of FL pinning in Ge Schottky junctions by characterizing the Fe/MgO/n-Ge junctions with single-crystalline and atomically smooth MgO epitaxially grown on Ge. The weak dependence of the SBH on the MgO thickness suggests that the surface states due to native defects on the Ge surface are likely to play the dominant role in the FL pinning. Further evidence is given...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.