The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
The substrate resistance of 45 nm CMOS devices shows a strong dependence on the distance between the device edge and the substrate contact ring, as well as on the number of sides that the surrounding ring contacts the substrate. We find that the unilateral gain is impacted by the substrate resistance (Rsx) through the gate-body capacitance feedback path at low to medium frequencies (< 20 GHz)....
S-parameter test structures from a 45 nm SOI CMOS technology show total capacitance per perimeter of poly-bounded ESD diodes ranges from ~0.35-0.42 fF/mum, and silicide-block (SBLK) bounded diodes show ~15-20% capacitance reduction. Floating-body or notched-silicon tied-body Gate-Silicided GGNMOS devices show total capacitance per width of ~0.65 fF/um for thin oxide devices, and ~0.72 fF/mum for thick...
S-parameter test structures show total capacitances per perimeter of ESD diodes increased from ~0.42fF/mum in 90nm technologies to ~0.7fF/mum in 65nm and 45nm technologies. To achieve lower capacitances for high frequency circuits, layout and process optimization are needed. SCR devices from a 45nm technology show ~0.32fF/mum and can be used for circuit applications with stringent capacitance requirement...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.