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Gallium nitride high-electron mobility transistors (GaN HEMTs) have attractive properties, low on-resistances and fast switching speeds. This paper presents the characteristics of a normally-on GaN HEMT that we fabricated. Further, the circuit operation of a Class-E amplifier is analyzed. Experimental results demonstrate the excellent performance of the gate drive circuit for the normally-on GaN HEMT...
This paper proposes a novel Maximum Power Point ] Tracking (MPPT) control method of thermoelectric power generation. This paper reveals the characteristics and the internal resistance of thermoelectric power module (TM). Analyzing the thermoelectric power generation system with boost chopper by state space averaging method, the output voltage and current of TM are estimated by with only single current...
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