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This letter describes the reversible switching performance of metal-organic-semiconductor (MOS) memory devices containing a polyfluorene-derivative single-layer film. The space-charge-limited current contributes to the switching behavior of WPF-oxy-F memory devices. The polyfluorene derivative reported here provides a significant advance to the field of organic semiconductors because it provides a...
We report on the excellent memory properties of silicon nanocrystals (Si-NCs) embedded in SiN. Si-NCs were formed by SiH4 low-energy plasma immersion ion implantation. Compared with control Si+-implanted sample, additional hydrogen enhanced Si-NC density. By incorporating Si-NCs in SiN, improved program/erase efficiency, endurance and retention characteristics were observed due to the generation...
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