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A novel tunnel recombination junction (TRJ) consisted of n type hydrogenated microcrystalline silicon oxide (n-µc-SiOx:H) layer and p type hydrogenated nanocrystalline silicon oxide (p-nc-SiOx:H) layer was proposed in hydrogenated amorphous silicon/microcrystalline silicon (a-Si:H/µc-Si:H) tandem solar cell. The absence of n-µc-Si:H compared to conventional n-µc-SiOx:H/n-µc-Si:H/p-nc-SiOx:H TRJ reduced...
In this paper, we report the simulation of electrical field distribution and growth of gradient arrayed TiO2 nanotubes by electrochemical anodization. A rectangle electrochemical electrode configuration, in which the end of cathode (Pt wire) is perpendicularly pointed to anode surface (Ti foil), is applied in NH4F glycol electrolyte. Electric field distribution on the surface of the titanium foil...
The performance of a-Si:H/μc-Si:H tandem solar cell was improved by optimizing the a-Si:H top cell and μc-Si:H bottom cell, respectively. For the a-Si:H top cell, we focused on opto-electrical and structural properties of phosphorous-doped hydrogenated silicon (Si:H) films and their effect on the open circuit voltage (Voc). The experimental results indicated that when nanosized silicon crystalline...
Though thin film silicon has evolved into an important technology for photovoltaic industry, further increasing its conversion efficiency remains to be a key task. In this work, we report the progress we have made in developing compatible nanocrystalline Si (nc-Si) technology with our existing amorphous silicon germanium (a-SiGe) based multi-junction solar cell manufacturing lines. We have conducted...
We proposed a low cost solution of flexible amorphous silicon solar cells on Polyethylene terephthalate(PET) polymer substrates deposited at low temperatures. PET films were firstly annealed both in the air and in vacuum at different temperatures, and the properties of PET films after annealing were evaluated. Then PET films were exposed to glow discharge Argon plasma in a standard PECVD system to...
A series of μc-Si:H thin films with high deposition rate were prepared by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) process under high power and high-pressure conditions. Keeping the other parameters constant, the total gas flow rate was adjusted from 100sccm to 500sccm The influence of total gas flow rate on the deposition process, electrical and micro-structural properties...
Hydrogenated microcrystalline silicon (μc-Si:H) intrinsic films and solar cells with n-i-p configuration were prepared by plasma enhanced chemical vapor deposition (PECVD). The influence of n/i and i/p buffer layers on the μc-Si:H cell performance were studied in detail. The experimental results demonstrated that the efficiency can be much improved when there's a higher crystallinity at n/i interface...
Controllable light utilization in silicon-based-thin-film solar cells with a DBR structure have been simulated. A experimental model cells constructed by a-Si pin/ZnO (~70 nm)/P+muc-Si(20 nm) were verified. The ratio of Isc increment can be reached to 14.1%.
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