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The poly crystalline silicon with regular square grains is fabricated by employing metallic (Cr/Al) periodic pads as the heat sinks and with underlying silicon oxynitride (SiON) as the heat absorption layer. The maximum lateral growth length of the poly-Si is 1.78 mum by this method. If the metal pads are periodically arranged, the poly-Si can grow to regular square grains following the high power...
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