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To further device scaling, a new hetero-channel MOS device is considered. A novel Ge/SiGe/Si lateral hetero-channel pFET that can significantly reduce band-to-band tunnelling (BTBT) leakage, retain high current drivability, and good electrostatics is introduced in this paper. Through detailed BTBT model in PDE simulators the on-current and off current in pFETs are analyzed. The simulation results...
This paper examines the validity of the widely used parabolic effective mass approximation by computing the ballistic injection velocity of a double-gate, ultrathin-body (UTB) n-MOSFET. The energy dispersion relations for a Si UTB are first computed by using a 20-band sp3d5s* -SO semiempirical atomistic tight-binding (TB) model coupled with a self-consistent Poisson solver. A semiclassical ballistic...
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