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ZnO films have been grown on sapphire(0001) substrates by means of the atmospheric pressure halide vapor phase epitaxy technique using ZnI 2 and O 2 as starting materials. The ZnO films showed a full width at half maximum of the (0002) X-ray peak of 20.2 min and a reflection high-energy electron diffraction pattern similar to that of a single crystal. A band-edge emission at 381.0...
Atmospheric pressure vapor-phase growth was demonstrated for the growth of zinc oxide (ZnO) films on sapphire (0001) substrates. The X-ray diffractogram showed a typical pattern of ZnO having a hexagonal structure, and a full-width at half-maximum (FWHM) of 23.3min was obtained in the X-ray diffraction profile. The growth rate of the ZnO film increased from 0.1 to 8.0μm/h with increasing growth temperature...
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