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We exploit ultrafast extreme-UV angle-resolved photoemission spectroscopy (XUV ARPES) for sensitive studies of non-equilibrium carrier dynamics in MoSe2. The experiments reveal inter-valley scattering and provide first evidence for the observation of band-gap excitons in ARPES.
We experimentally demonstrate a thermal emitter comprising sapphire and a vanadium dioxide thin film, which exhibits large negative differential emittance: over a temperature range of > 10 °C, the thermal emittance decreases by over 10%.
Alternate information processing state variables and computing architectures are an active area of research given the rapidly approaching physical limitations of conventional CMOS scaling. In this context, it may be worth exploring the idea of ultra fast phase transitions in correlated oxides as a basic switching element that can be used in CMOS-like or neural circuits or other high-frequency circuit...
We report a novel phase transition memory (PTM) where we employ electric field and temperature induced phase transition to store, erase and read information within a single electronic element. The devices operate without the need for charge transport through insulator films for charge storage in a floating gate thus avoiding a variety of retention and reliability issues of the conventional floating...
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