The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Recent success of inexpensive and high-throughput chemical vapor deposition (CVD) growth [1] of graphene on Ni or Cu substrates has shown promises for potential industrial applications such as transparent electrodes [2] and field effect transistors (FET). [3] However, high-coverage uniform growth of monolayer graphene on a wafer scale is still a major obstruction, which impedes high yield integration...
We measured Radio-Frequency (RF) performance of devices with graphene grown using low temperature Inductively-Coupled Plasma Chemical Vapor Deposition (ICP-CVD) method on 6-inch wafer for the first time. To remove the coupling of electrode in-plane, we introduced locally-embedded-back-gate using TiN metal. The symmetric structure of 2-gate fingers was adopted to reduce misalign issue during fabrication...
This paper describes the design and fabrication of the high performance ring oscillator with the standard 0.5 mum bottom-gate amorphous Ga2O3-In2O3-ZnO TFT technology. A series of process and geometry parameters of devices are sophistically optimized to decrease the circuit signal's propagation delay and, in particular, a novel 3 TFTs bootstrapped inverter structure using the load-transistor's overlap...
The reliability issues, including 100k cycle's endurance and 2 hours high temperature storage (HTS: 150degC, 200degC and 250degC) of sub-90nm NAND flash cells, are studied. Furthermore, the trap generation models in endurance and interface trap recovery model in HTS are proposed. Endurance characteristics show that the interface trap and bulk trap generation have a power-dependence on program/erase...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.