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Alloy scattering in a sSi/ /strained Silicon on Insulator (SOI) (sSOI) quantum-well (QW) p-MOSFET is investigated by hole density modulation through applying back-gate biases. The hole mobility under negative back-gate biases is found degraded by intensified alloy scattering at low electrical field because more holes are distributed in the bulk ...
This paper presents a millimeter-wave (mmWave) mixer in 0.13μm SiGe HBT technology. The single-ended mixer is designed to down convert modulated mmWave signals with high speed up to 10Gbps. The on-wafer measured results show that, the fabricated 0.7mm × 0.5mm mixer exhibits a 10dB return-loss bandwidth covering the whole D-band (110–170GHz) at RF input port.
Epitaxial growth of Ni germanosilicide on relaxed SiGe (30% Ge content) substrate has been achieved by using 3 nm Al interlayer. This epitaxial layer shows a very good uniformity and smooth interface and surface. The epitaxial layer and the SiGe substrate match very well and no misfit dislocation is found at the interface.
A 130 GHz low noise amplifier (LNA) in 0.13-μm SiGe BiCMOS technology has been designed and characterized. The gain-boosted cascode topology with 3D grounded-shielding structures is employed. The results showed that the LNA with a chip area of 400 μm × 900 μm, gain of ~17.5 dB with a 3-dB bandwidth of ~25 GHz, and noise figure of ~7.7 dB at 130 GHz with...
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