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A double-heterojunction bipolar transistor having a degenerately doped emitter layer is investigated. The base-emitter Esaki diode introduces very low input impedance in the off- state but does not degrade the current gain at high forward bias. The heavily doped emitter layer makes it possible to scale the emitter-layer thickness considerably. The heavily doped emitter layer also allows contacting...
We report on a double heterojunction bipolar transistor with an Esaki base emitter tunnel junction. The emitter and base contact are deposited simultaneously on top of the emitter contact layer. Transistors with 60 nm wide emitters were fabricated. The Esaki tunneling current did not degrade the gain of the device at high current density. The backward diode between the base contact and the base layer...
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