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This paper overviews the Defense Advanced Research Projects Agency (DARPA) Adaptive RF Technologies (ART) and Arrays at Commercial Timescales (ACT) programs. These programs seek to create adaptable and reusable RF hardware in order to lower nonrecurring engineering development costs and timelines for RF systems and to allow RF hardware to be adapted to new missions after fielding. To achieve this...
The proliferation of the wireless market has driven the demand for RF systems to dramatically increase functionality, frequency coverage, bandwidth, and efficiency; while simultaneously reducing power consumption and die size to save power and cost. For example, the highly complex RF systems in handset technology have seen a dramatic increase in frequency, operating bands, and complexity of signals...
This paper reports on the design of a power amplifier covering the entire E-band satellite communication bands (71-76 GHz & 81-86 GHz) and demonstrating a high saturated output power of more than 1 W across this frequency range of interest. The circuit was fabricated by using an advanced 100 nm GaN high-electron-mobility transistor technology with an AlN-interlayer epitaxy, demonstrating a transit...
This paper presents a 40 Gbps micro-ring modulator driver IC implemented in a 130nm SiGe BiCMOS technology providing a fT,max of 250GHz. The proposed bandwidth-optimized driver IC achieves 2Vppd output signal swing required for the integrated high-impedance silicon photonics ring modulator or 1Vppd when differentially terminated with 100Ω. The complete driver including input termination and biasing...
Solid-state sources and receivers are now available throughout the frequency range from 100 GHz to 3 THz. Although III-V MMIC amplifiers and Si-Ge technology are beginning to extend throughout this band, systems based on GaAs Schottky diodes still offer the best performance for most applications. These include a variety of important applications in science, and also test & measurement equipment...
We present a high-linearity pseudo-differential W- band amplifier IC, implemented in a 130 nm InP HBT process in a 1.1×0.72 mm2 die. Correcting for test structure losses, the amplifier has a measured 21.9 dBm output-referred 3rd order intercept point (OIP3) and a single-stage gain of 6.4 dB at 100 GHz. The amplifier has a noise figure of 6.8 dB +/- 1dB at 95 GHz. The OIP3/Pdc ratio is 0.79 at 100...
The use of chemical vapor deposition diamond as a substrate for gallium nitride (GaN) to form GaN- on-diamond has the potential to allow for higher linear power densities in GaN high electron mobility transistors (HEMTs). The increase in GaN HEMT power density on diamond has been limited to date by the electrical leakage in GaN-on-diamond substrates. In this paper we show that to eliminate buffer...
Electron mobility and self-heating models for drain current simulations of AlN/GaN MIS-HEMTs have been derived for embedded source field-plate structures. They are scalable physical models. To apply the models to simulate power switching applications including DC-DC converters, the weak inversion to linear characteristics and the maximum drain current are important. The models are implemented in MIT...
Presents the introductory welcome message from the conference proceedings. May include the conference officers' congratulations to all involved with the conference event and publication of the proceedings record.
Manufacturing readiness of the world's first highly reliable 650V GaN HEMT is demonstrated with high process capability (CpK>1.6) for leakage and on resistance. This technology was developed in a Si-CMOS compatible 6-inch foundry and has been demonstrated with over one thousand wafers worth of data spread over two generations of technology nodes covering multiple products and packages collected...
This paper presents the design and performance of two millimeter-wave LNAs using 35nm InP HEMT device technology. First, a single-ended 3-stage LNA, operating over the 81-86 GHz band, is reported with a noise figure (NF) of 1.6-1.9 dB and a gain of 28 ±1 dB. This is the lowest reported noise figure for LNAs at this frequency. Secondly, a balanced LNA, operating over the 56- 110 GHz band, is reported...
A 1 kilowatt pulsed RF amplifier operating at 150 V for radar applications in the UHF frequency band from 420 MHz to 450 MHz is presented. GaN HEMT devices with 600 V breakdown voltage are becoming ubiquitous in power conversion applications operating from kHz to a few MHz, but they have never been considered for RF applications in power amplifiers. This paper explores the advantages in high power...
This paper presents the measured results of two circuits fabricated with a millimeter wave 100 nm Gallium Nitride on Silicon (GaN/Si) process. The first circuit is a 27-34 GHz power amplifier, presenting 6 W of output power in pulsed operation and 5.6 W in CW operation. The second circuit, using exactly the same process, is a 8-12 GHz Low Noise Amplifier presenting 1.3 dB noise figure from 11 to 13...
This paper presents a new series Doherty power amplifier (SDPA) with a single-ended output that eliminates transformers in the output matching network. The series power combining architecture offers higher output power in scaled CMOS compared to conventional Doherty PAs and is amenable to integration at microwave and millimeter wave bands. The SDPA is implemented in 45-nm CMOS SOI and achieves a peak...
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